Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm

An InAs0.89Sb0.11 photovoltaic detector that operates at room temperature in the 2.5–5 μm mid-infrared wavelength region is reported. The photodiode has an extended spectral response compared with other currently available III–V room-temperature detectors. In order to accommodate the large lattice m...

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Bibliographic Details
Published in:Applied physics letters 2000-08, Vol.77 (6), p.872-874
Main Authors: Gao, H. H., Krier, A., Sherstnev, V. V.
Format: Article
Language:English
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Summary:An InAs0.89Sb0.11 photovoltaic detector that operates at room temperature in the 2.5–5 μm mid-infrared wavelength region is reported. The photodiode has an extended spectral response compared with other currently available III–V room-temperature detectors. In order to accommodate the large lattice mismatch between the InAs0.89Sb0.11 active region and the InAs substrate, a buffer layer with an intermediate composition was introduced into the structure. In this way, we obtained room-temperature photodiodes with a cutoff wavelength near 5 μm, a peak responsivity of 0.8 A/W, and a detectivity of 1.26×109 cm Hz1/2/W. These devices could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 μm, or as a replacement for PbSe photoconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1306656