Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

We report on photoassisted wet chemical formation of thin oxide films on n-GaN layers in potassium hydroxide based electrolytes at room temperature. The kinetics of the oxide formation and dissolution were examined via photocurrent transients. The tendency of the photocurrent to level out during pho...

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Bibliographic Details
Published in:Applied physics letters 2000-06, Vol.76 (26), p.3923-3925
Main Authors: Rotter, T., Mistele, D., Stemmer, J., Fedler, F., Aderhold, J., Graul, J., Schwegler, V., Kirchner, C., Kamp, M., Heuken, M.
Format: Article
Language:eng
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Summary:We report on photoassisted wet chemical formation of thin oxide films on n-GaN layers in potassium hydroxide based electrolytes at room temperature. The kinetics of the oxide formation and dissolution were examined via photocurrent transients. The tendency of the photocurrent to level out during photoelectrochemical etching experiments is associated with a quasiequilibrium state at the semiconductor/electrolyte interface. Homogeneous oxide films were grown in weak alkaline solutions (11
ISSN:0003-6951
1077-3118