Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Electron holography has been used to image electrostatic potential variations across an AlGaN/InGaN/AlGaN heterojunction diode. Features in the energy profile have been interpreted in terms of the expected built-in voltage across the p-n junction of the diode as well as contributions from the sponta...

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Bibliographic Details
Published in:Applied physics letters 2000-05, Vol.76 (21), p.3055-3057
Main Authors: McCartney, M. R., Ponce, F. A., Cai, Juan, Bour, D. P.
Format: Article
Language:English
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Summary:Electron holography has been used to image electrostatic potential variations across an AlGaN/InGaN/AlGaN heterojunction diode. Features in the energy profile have been interpreted in terms of the expected built-in voltage across the p-n junction of the diode as well as contributions from the spontaneous and piezoelectric polarization fields within the material. Additional profile features indicate the presence of two-dimensional electron gas at the upper interface of the InGaN well, and evidence for hole accumulation close to the lower interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.126577