GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon

To grow high-quality heteroepitaxial layers, we propose a compliant silicon substrate consisting of a thin epitaxial silicon film on a high-density porous layer as a membrane and an expansive low-density porous layer as a mechanical damper which shields the overlying layers from the massive wafer. G...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1999-12, Vol.75 (26), p.4118-4120
Main Authors: Romanov, S. I., Mashanov, V. I., Sokolov, L. V., Gutakovskii, A., Pchelyakov, O. P.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:To grow high-quality heteroepitaxial layers, we propose a compliant silicon substrate consisting of a thin epitaxial silicon film on a high-density porous layer as a membrane and an expansive low-density porous layer as a mechanical damper which shields the overlying layers from the massive wafer. GeSi films over the critical thickness have been grown by molecular-beam epitaxy on these substrates. Transmission electron microscopy analysis shows that Ge0.2Si0.8 films have no dislocations owing to just elastic strain relaxation whereas plastic flow in the pseudomorphic films that are being grown on conventional Si substrates occurs with generation of dislocations in a regular manner. The experimental data on porous silicon structure are presented in some detail and are briefly discussed in connection with substrate compliance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125555