Size-quantized CdS films in thin film CuInS2 solar cells

Semiconductor quantum dots and wires are the subject of great interest, mainly due to their size-dependent electronic structures, in particular increased band gap and therefore optoelectronic properties. We have electrodeposited films of size-quantized CdS (∼4 to 5 nm cross section by 15 nm height)...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1998-11, Vol.73 (21), p.3135-3137
Main Authors: Gal, Dori, Hodes, Gary, Hariskos, Dimitri, Braunger, Dieter, Schock, Hans-Werner
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Semiconductor quantum dots and wires are the subject of great interest, mainly due to their size-dependent electronic structures, in particular increased band gap and therefore optoelectronic properties. We have electrodeposited films of size-quantized CdS (∼4 to 5 nm cross section by 15 nm height) as a buffer layer on CuInS2. The resulting CuInS2/CdS thin-film solar cells gave increased photocurrents and higher light-to-electricity conversion efficiencies (>11%) than those made with conventional nonquantized CdS films. This was due mainly to the increased band gap of the quantized CdS, allowing more light to reach the active CuInS2 layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122697