Microscopic theory of gain for an InGaN/AlGaN quantum well laser

This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excito...

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Bibliographic Details
Published in:Applied physics letters 1997-11, Vol.71 (18), p.2608-2610
Main Authors: Chow, W. W., Wright, A. F., Girndt, A., Jahnke, F., Koch, S. W.
Format: Article
Language:English
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Summary:This letter describes a microscopic gain theory for an InGaN/AlGaN quantum well laser. The approach, which is based on the semiconductor Bloch equations, with carrier correlations treated at the level of quantum kinetic theory in the Markovian limit, gives a consistent treatment of plasma and excitonic effects, both of which are important under lasing conditions. Inhomogeneous broadening due to spatial variations in quantum well thickness or composition is taken into account by a statistical average of the homogeneously broadened spectra.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.120155