Exciton localization and temperature stability in self-organized InAs quantum dots

We investigated the temperature effect on exciton localization in self-organized InAs quantum dots. Quenching energy for excitons in reference quantum well and quantum dots was found to be 2 and 7 meV, respectively. Thermoactivation energy of electron-hole emission through a GaAs barrier in the quan...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1996-01, Vol.68 (2), p.205-207
Main Authors: Lubyshev, D. I., González-Borrero, P. P., Marega, E., Petitprez, E., La Scala, N., Basmaji, P.
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated the temperature effect on exciton localization in self-organized InAs quantum dots. Quenching energy for excitons in reference quantum well and quantum dots was found to be 2 and 7 meV, respectively. Thermoactivation energy of electron-hole emission through a GaAs barrier in the quantum dots was measured as 46 meV. We observed an unusual decrease of photoluminescence peak full width at half maximum with temperature, suggesting suppression of nonpredominant size quantum dot emissions due to carrier tunneling between nearby dots.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116461