Fabrication of boron-carbide/boron heterojunction devices

We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron–carbide (B5C) acts as a p-type...

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Bibliographic Details
Published in:Applied physics letters 1996-03, Vol.68 (11), p.1495-1497
Main Authors: Hwang, Seong-Don, Byun, Dongjin, Ianno, N. J., Dowben, P. A., Kim, H. R.
Format: Article
Language:English
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Summary:We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron–carbide (B5C) acts as a p-type material. Both boron and boron–carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.116266