Band filling at low optical power density in semiconductor dots

We have studied band filling in strained InP dots grown on GaInP. Compared to quantum wells, the dots show band filling at two orders of magnitude lower optical excitation power density. We show that the emission attributed to band filling originates from the dots by using spatially resolved photolu...

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Bibliographic Details
Published in:Applied physics letters 1995-09, Vol.67 (13), p.1905-1907
Main Authors: Castrillo, P., Hessman, D., Pistol, M.-E., Anand, S., Carlsson, N., Seifert, W., Samuelson, L.
Format: Article
Language:English
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Summary:We have studied band filling in strained InP dots grown on GaInP. Compared to quantum wells, the dots show band filling at two orders of magnitude lower optical excitation power density. We show that the emission attributed to band filling originates from the dots by using spatially resolved photoluminescence recording emission from single dots with very high spectral resolution. With time-resolved photoluminescence spectra we follow the dynamic relaxation of the charge carriers in the dots.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114372