Passivation of InGaAs/InP surface quantum wells by ion-gun hydrogenation

We have investigated the optical properties of an InGaAs/InP surface quantum well before and after room-temperature low-energy ion-gun hydrogenation. The luminescence efficiency of the surface quantum well was enhanced by up to two orders of magnitude after hydrogenation. Our experiments also reveal...

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Bibliographic Details
Published in:Applied physics letters 1994-05, Vol.64 (20), p.2658-2660
Main Authors: Chang, Ying-Lan, Tan, I-Hsing, Reaves, Casper, Merz, James, Hu, Evelyn, DenBaars, Steve, Frova, A., Emiliani, V., Bonanni, B.
Format: Article
Language:English
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Summary:We have investigated the optical properties of an InGaAs/InP surface quantum well before and after room-temperature low-energy ion-gun hydrogenation. The luminescence efficiency of the surface quantum well was enhanced by up to two orders of magnitude after hydrogenation. Our experiments also reveal that the nonradiative recombination centers at the etched surface can be saturated by increasing excitation density for the photoluminescence measurement. To ‘‘unmask’’ the effects of the saturation of recombination sites, for a true comparison of passivation effects brought about by different surface treatments, an excitation density below 1 W/cm2 is required.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111483