Andreev reflection at superconducting contacts to GaAs/AlGaAs heterostructures

Highly transmissive ohmic contacts to the two-dimensional electron gas in GaAs/AlGaAs heterostructures have been made. For these contacts, which are of μm scale, a newly developed process of Ti/Sn evaporation and diffusion has been used. Devices consisting of these superconducting contacts combined...

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Bibliographic Details
Published in:Applied physics letters 1993-10, Vol.63 (15), p.2079-2081
Main Authors: LENSSEN, K.-M. H, MATTERS, M, HARMANS, C. J. P. M, MOOIJ, J. E, LEYS, M. R, VAN DER VLEUTEN, W, WOLTER, J. H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Granular, melt-textured, amorphous and composite superconductors
Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Inhomogeneous superconductors and superconducting systems
Physics
Superconductivity
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Summary:Highly transmissive ohmic contacts to the two-dimensional electron gas in GaAs/AlGaAs heterostructures have been made. For these contacts, which are of μm scale, a newly developed process of Ti/Sn evaporation and diffusion has been used. Devices consisting of these superconducting contacts combined with gate structures have shown clear evidence for the occurrence of Andreev reflection. Moreover a marked effect of the gate voltage on the dV/dI−V characteristics has been found, which proves that superconductivity has been induced into the semiconductor.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110598