Low-threshold buried-ridge II-VI laser diodes

Blue-green (λ=511 nm) separate confinement laser structures based on lattice-matched MgZnSSe-ZnSSe-CdZnSe have been grown by molecular beam epitaxy. Wide stripe gain-guided devices have been fabricated from several such wafers. These devices exhibit room-temperature pulsed threshold current densitie...

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Bibliographic Details
Published in:Applied physics letters 1993-10, Vol.63 (17), p.2315-2317
Main Authors: HAASE, M. A, BAUDE, P. F, HAGEDORN, M. S, QIU, J, DEPUYDT, J. M, CHENG, H, GUHA, S, HÖFLER, G. E, WU, B. J
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Blue-green (λ=511 nm) separate confinement laser structures based on lattice-matched MgZnSSe-ZnSSe-CdZnSe have been grown by molecular beam epitaxy. Wide stripe gain-guided devices have been fabricated from several such wafers. These devices exhibit room-temperature pulsed threshold current densities as low as 630 A/cm2 and threshold voltages less than 9 V. Using a novel self-aligned process that results in a planar surface, buried-ridge laser diodes have also been fabricated. These devices have demonstrated room-temperature threshold currents as low as 2.5 mA, which is more than a factor of 50 lower than that of any previously reported II-VI laser diode. Room-temperature operation at duty factors up to 50% has been demonstrated. The far-field patterns from these devices indicate single lateral mode operation, suitable for diffraction-limited applications, such as optical data storage.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110511