High contrast, high reflectivity, optical modulator using the Franz-Keldysh effect in a thin film of GaAs

The bulk Franz-Keldysh effect in a thin film of GaAs is used to demonstrate high contrast ‘‘normally on’’ and ‘‘normally off’’ optical modulation at 885.2 and 877.5 nm, respectively. The device, a Ag/GaAs/ITO asymmetric Fabry–Perot structure, exhibits a contrast ratio of ∼75:1 and reflectivity of 32...

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Bibliographic Details
Published in:Applied physics letters 1993-11, Vol.63 (21), p.2878-2880
Main Author: Tayebati, Parviz
Format: Article
Language:English
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Summary:The bulk Franz-Keldysh effect in a thin film of GaAs is used to demonstrate high contrast ‘‘normally on’’ and ‘‘normally off’’ optical modulation at 885.2 and 877.5 nm, respectively. The device, a Ag/GaAs/ITO asymmetric Fabry–Perot structure, exhibits a contrast ratio of ∼75:1 and reflectivity of 32.5% in the normally on mode. This is a demonstration of an asymmetric Fabry–Perot device using the bulk Franz–Keldysh effect. Using the Franz–Keldysh effect makes a larger number of materials and wider wavelength range available for optical modulation than quantum confined effects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110312