Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal-insulator-semiconductor devices

In order to fabricate metal-insulator-semiconductor (MIS) devices with gate insulating films thinner than 5.0 nm, organic monolayers have been grafted on the native oxide layer of silicon wafers. We demonstrate that a single monolayer of octadecyltrichlorosilane with a 2.8 nm thickness allows to fab...

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Bibliographic Details
Published in:Applied physics letters 1993-05, Vol.62 (18), p.2256-2258
Main Authors: FONTAINE, P, GOGUENHEIM, D, DERESMES, D, VUILLAUME, D, GARET, M, RONDELEZ, F
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:In order to fabricate metal-insulator-semiconductor (MIS) devices with gate insulating films thinner than 5.0 nm, organic monolayers have been grafted on the native oxide layer of silicon wafers. We demonstrate that a single monolayer of octadecyltrichlorosilane with a 2.8 nm thickness allows to fabricate a silicon based MIS device with gate current density as low as 10−8 A/cm2 at 5.8 MV/cm, insulator charge density lower than 1010 cm−2, fast interface state density of the order of 1011 cm−2 eV−1, and dielectric breakdown field as high as 12 MV/cm. Moreover, this insulating film is thermally stable up to 450 °C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109433