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Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF
Vacuum scanning tunneling microscopy has been used to investigate the hydrogen-terminated Si(111) surfaces obtained upon dissolution of the native oxide in HF and NH4F solutions. Whereas etching in aqueous HF acid produces an atomically rough surface, comparable treatment in NH4F results in atomical...
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Published in: | Applied physics letters 1991-04, Vol.58 (15), p.1656-1658 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Vacuum scanning tunneling microscopy has been used to investigate the hydrogen-terminated Si(111) surfaces obtained upon dissolution of the native oxide in HF and NH4F solutions. Whereas etching in aqueous HF acid produces an atomically rough surface, comparable treatment in NH4F results in atomically flat surfaces. These atomically flat surfaces are extremely well ordered and exhibit terraces which extend thousands of angstroms. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.105155 |