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High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
High concentrations of electrically active phosphorus have been grown in Si epitaxial layers at 750 °C and below in an atmospheric pressure deposition system using PH3 and SiCl2H2 in H2. PH3 remarkably enhances the silicon deposition rate in the range 550–750 °C in contrast to previously reported do...
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Published in: | Applied physics letters 1991-04, Vol.58 (17), p.1896-1898 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | High concentrations of electrically active phosphorus have been grown in Si epitaxial layers at 750 °C and below in an atmospheric pressure deposition system using PH3 and SiCl2H2 in H2. PH3 remarkably enhances the silicon deposition rate in the range 550–750 °C in contrast to previously reported doping studies using SiH4. Chemical concentrations as high as 2.5×1020 cm−3 with an electrical activity of 1×1020 cm−3 were obtained in layers that were free of defects by transmission electron microscopy. The doping level can be modulated between 1×1019 and 5×1016 cm−3 indicating that there are no complications due to dopant retention on sample or reactor wall surfaces. Emitter-base diodes formed in the epitaxial layers exhibited ideal forward and low-leakage reverse characteristics. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.105066 |