Si(100)-(2×1)boron reconstruction : self-limiting monolayer doping

A (2×1) surface reconstruction distinct from the clean Si(100)-(2×1) surface is formed by depositing boron onto silicon in ultrahigh vacuum. Overgrowth of epitaxial silicon at low temperature preserves a (2×1) superstructure of substitutional boron. Hall-effect measurements at 4.2 K show complete el...

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Bibliographic Details
Published in:Applied physics letters 1990-12, Vol.57 (26), p.2779-2781
Main Authors: HEADRICK, R. L, WEIR, B. E, LEVI, A. F. J, EAGLESHAM, D. J, FELDMAN, L. C
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
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Summary:A (2×1) surface reconstruction distinct from the clean Si(100)-(2×1) surface is formed by depositing boron onto silicon in ultrahigh vacuum. Overgrowth of epitaxial silicon at low temperature preserves a (2×1) superstructure of substitutional boron. Hall-effect measurements at 4.2 K show complete electrical activity for boron coverages of 1/2 monolayer, but additional boron above 1/2 monolayer is not electrically active.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103785