Nitrogen pair luminescence in GaAs

We report on the first observation of different nitrogen pair complexes in GaAs. These complexes, which have been searched for since the ’60s, are studied under the application of hydrostatic pressure. By carefully tuning the pressure, we make one after the other of the NNi pairs (1≤i≤10) appear in...

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Bibliographic Details
Published in:Applied physics letters 1990-04, Vol.56 (15), p.1451-1453
Main Authors: XIAO LIU, PISTOL, M.-E, SAMUELSON, L, SCHWETLICK, S, SEIFERT, W
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:We report on the first observation of different nitrogen pair complexes in GaAs. These complexes, which have been searched for since the ’60s, are studied under the application of hydrostatic pressure. By carefully tuning the pressure, we make one after the other of the NNi pairs (1≤i≤10) appear in the band gap of GaAs and then become the major exciton recombination channel. We compare our results for nitrogen states in GaAs with the classical case of NNi excitons in GaP.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102495