Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100) substrates patterned with ridges and grooves in the [011̄] direction. Low-temperature cathodoluminescence was used to measure the Al fraction and QW thickness on top of the ridges and grooves as a function of ridge an...

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Bibliographic Details
Published in:Applied physics letters 1989-01, Vol.54 (5), p.433-435
Main Authors: MEIER, H. P, VAN GIESON, E, WALTER, W, HARDER, C, KRAHL, M, BIMBERG, D
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100) substrates patterned with ridges and grooves in the [011̄] direction. Low-temperature cathodoluminescence was used to measure the Al fraction and QW thickness on top of the ridges and grooves as a function of ridge and groove width. Surface diffusion during growth depletes Ga from the side facets while increasing the incorporation of Ga on the (100) sections of ridges and grooves. The QW thickness on top of a ridge grown at 710 °C increases from 72 to 95 Å, and the Al fraction x decreases from x=0.33 to x=0.29 as the ridge width is narrowed from 30 to 4 μm. Graded refractive index separate confinement heterostructure lasers with nominally 70 Å QWs and Al0.2Ga0.8As barriers were grown on patterned substrates at 695 and 725 °C. Lasers fabricated on the overgrown 4-μm-wide ridges have a 20 meV decrease in emission energy compared to laser diodes on 30 μm ridges.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100943