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49.35 MHz GBW and 33.43 MHz GBW amplifiers in flexible a-IGZO TFT technology
The authors present the implementation of two amplifiers in a commercial flexible amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology: a Cherry Hooper (CH) amplifier and a 4-stage common source amplifier. The CH amplifier is designed as a pre-amplifier for wireless rec...
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Published in: | Electronics letters 2020-07, Vol.56 (15), p.782-785 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The authors present the implementation of two amplifiers in a commercial flexible amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology: a Cherry Hooper (CH) amplifier and a 4-stage common source amplifier. The CH amplifier is designed as a pre-amplifier for wireless receivers. It is optimised for a high gain-bandwidth product (GBW). From a supply voltage of $V_{{\rm DD}}=8$VDD=8 V it provides 19.4 dB gain and has a $-3\,{\rm dB}$−3dB-bandwidth of 5.3 MHz, while consuming 0.2 mW. It has a GBW of 49.35 MHz, which is more than a factor two better than previously reported a-IGZO TFT amplifiers. The 4-stage common source amplifier is designed as output buffer, has a very wide range of operating conditions and strong robustness against manufacturing tolerances. From a supply voltage of $V_{{\rm DD}}=8$VDD=8 V it provides 28.9 dB gain, has a $-3\,{\rm dB}$−3dB-bandwidth of 1.2 MHz, and a GBW product of 33.43 MHz, while consuming 14.2 mW. Both circuits can operate from a supply voltage between 2.5 and 10 V. |
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ISSN: | 0013-5194 1350-911X 1350-911X |
DOI: | 10.1049/el.2020.0813 |