Epitaxial lateral overgrowth on the air void embedded SiO2 mask for InGaN light-emitting diodes

We fabricated In x Ga 1 x N multiple quantum well (MQW) light-emitting diodes (LEDs) on an air void embedded SiO 2 mask using a simple process (silver (Ag) deposition, SiO 2 capping, and high-temperature annealing). Ag was volatilized in the MOCVD process and formed an air void, as revealed by energ...

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Bibliographic Details
Published in:CrystEngComm 2013-01, Vol.15 (3), p.662-665
Main Authors: Kim, Sang-Mook, Lee, Kwang-Ho, Jung, Gun Young
Format: Article
Language:English
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Summary:We fabricated In x Ga 1 x N multiple quantum well (MQW) light-emitting diodes (LEDs) on an air void embedded SiO 2 mask using a simple process (silver (Ag) deposition, SiO 2 capping, and high-temperature annealing). Ag was volatilized in the MOCVD process and formed an air void, as revealed by energy dispersive X-ray spectroscopy images. The light output power (at 20 mA) of the LED using epitaxial lateral overgrowth on the SiO 2 mask (47.8%) and LED with the air void embedded SiO 2 mask (96.8%) are enhanced compared to conventional LEDs. From reflectance measurements, the enhancement of LEDs with an air void embedded SiO 2 mask could be mainly explained by the increased high incident angle specular reflectance. We fabricated In x Ga 1 x N multiple quantum well (MQW) light-emitting diodes (LEDs) on an air void embedded SiO 2 mask using a simple process (silver (Ag) deposition, SiO 2 capping, and high-temperature annealing).
ISSN:1466-8033
1466-8033
DOI:10.1039/c3ce40219c