Single-crystalline-like indium tin oxide thin films prepared by plasma enhanced atomic layer deposition

In this study, indium tin oxide (ITO) thin films are prepared by plasma enhanced atomic layer deposition (PEALD) using alternating exposures to cyclopentadienyl indium and oxygen plasma for indium oxide (In 2 O 3 ) and tetrakis (dimethylamido) tin and oxygen plasma for tin oxide (SnO 2 ). The cycle...

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Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-09, Vol.1 (34), p.1235-12358
Main Authors: Hsu, Chia-Hsun, Zhang, Zhi-Xuan, Shi, Chun-Yan, Huang, Pao-Hsun, Wu, Wan-Yu, Wuu, Dong-Sing, Gao, Peng, Huang, Chien-Jung, Lien, Shui-Yang, Zhu, Wen-Zhang
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Crystal structure
Crystallinity
Cycle ratio
Film thickness
Hall effect
Indium oxides
Indium tin oxides
Oxygen plasma
Photoelectrons
Plasma
Single crystals
Substrates
Thin films
Tin
Tin dioxide
Transmittance
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Summary:In this study, indium tin oxide (ITO) thin films are prepared by plasma enhanced atomic layer deposition (PEALD) using alternating exposures to cyclopentadienyl indium and oxygen plasma for indium oxide (In 2 O 3 ) and tetrakis (dimethylamido) tin and oxygen plasma for tin oxide (SnO 2 ). The cycle ratio of SnO 2 -to-In 2 O 3 is varied to investigate the effect on the film properties. The ITO films are examined using X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, Hall-effect probe measurement, and UV-visible transmittance measurement. It is found that the film thickness and Sn content can be well controlled by adjusting the SnO 2 cycle ratio. The lowest resistivity of 2.9 × 10 −4 Ω cm, a high mobility of 52 cm 2 V −1 s −1 and an average optical transmittance of 89% are obtained at the SnO 2 cycle ratio of 5%. A very high doping efficiency of 86% is achieved. Furthermore, a single-crystalline-like structure is obtained, accounting for the high mobility of the films. The PEALD single-crystalline-like ITO films are suitable for electronic device applications requiring complex substrate deposition or sub-nanoscale thickness control. Plasma enhanced atomic layer deposited indium tin oxide films using InCp, TDMASn and O 2 plasma as metal and oxygen precursors exhibit a single-crystalline-like structure, high carrier mobility and low resistivity.
ISSN:2050-7526
2050-7534
DOI:10.1039/d2tc01834a