Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

Metal chalcogenides are important members of the two-dimensional (2D) materials family and have been extensively investigated for high-performance electronic device applications. However, when they are produced on a large-scale, their carrier mobilities are strongly influenced by the surface conditi...

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Bibliographic Details
Published in:Materials horizons 2020-03, Vol.7 (3), p.827-834
Main Authors: Jannat, Azmira, Yao, Qifeng, Zavabeti, Ali, Syed, Nitu, Zhang, Bao Yue, Ahmed, Taimur, Kuriakose, Sruthi, Mohiuddin, Md, Pillai, Naresh, Haque, Farjana, Ren, Guanghui, Zhu, De Ming, Cheng, Ningyan, Du, Yi, Tawfik, Sherif Abdulkader, Spencer, Michelle J. S, Murdoch, Billy J, Wang, Lan, McConville, Chris F, Walia, Sumeet, Daeneke, Torben, Zhu, Lianqing, Ou, Jian Zhen
Format: Article
Language:English
Subjects:
Chalcogenides
Conduction bands
Crystal structure
Electron mass
Electron mobility
Electron transport
Electronic devices
Field effect transistors
First principles
Indium
Semiconductor devices
Two dimensional materials
Unit cell
Vacancies
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Summary:Metal chalcogenides are important members of the two-dimensional (2D) materials family and have been extensively investigated for high-performance electronic device applications. However, when they are produced on a large-scale, their carrier mobilities are strongly influenced by the surface conditions. Here, we print indium sulphide (In 2 S 3 ) with the thickness down to the single unit cell limit on wafer-scale out of metallic indium liquid, in which structural indium vacancies are formed in an orderly fashion. First principles investigations reveal that the unique ordered-vacancy structure results in a highly dispersive conduction band with low effective electron mass, forming multiple band-like electronic transport channels sandwiched within the crystal structure which are less influenced by the surface conditions. Back-gated field effect transistors are fabricated, and the measured mobility is up to 58 cm 2 V −1 s −1 with a high degree of reproducibility, which is amongst one of the highest reported for wafer-scale-grown ultra-thin metal chalcogenides. This establishes ordered-vacancy-enabled semiconductors in the 2D geometry as suitable alternatives for new generation high-performance electronic devices. The unique and long-range ordered-vacancy structure in wafer-scale grown single-unit-cell-thick In 2 S 3 facilitates excellent electronic performance.
ISSN:2051-6347
2051-6355
DOI:10.1039/c9mh01365b