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A microcontact impedance study on NASICON-type Li 1+x Al x Ti 2−x (PO 4 ) 3 (0 ≤ x ≤ 0.5) single crystals

We successfully demonstrated the applicability of microcontact impedance spectroscopy (MC IS) on Li + conducting solid electrolytes and measured the Li + bulk conductivity ( σ b ) of LiTi 2 (PO 4 ) 3 (LTP) and Li 1+x Al x Ti 2−x (PO 4 ) 3 (LATP) single crystals independent of microstructural effects...

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Bibliographic Details
Published in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2016, Vol.4 (4), p.1506-1513
Main Authors: Rettenwander, D., Welzl, A., Pristat, S., Tietz, F., Taibl, S., Redhammer, G. J., Fleig, J.
Format: Article
Language:English
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Summary:We successfully demonstrated the applicability of microcontact impedance spectroscopy (MC IS) on Li + conducting solid electrolytes and measured the Li + bulk conductivity ( σ b ) of LiTi 2 (PO 4 ) 3 (LTP) and Li 1+x Al x Ti 2−x (PO 4 ) 3 (LATP) single crystals independent of microstructural effects ( e.g. , grain boundaries, pores, and density). The crystals had a size of about 100 μm in each direction and crystallized with NASICON-type structure ( R 3̄ c ). Finite element calculations were performed to validate the impedance data analysis. A strong increase in σ b in the order of three magnitudes (3.16 × 10 −6 to 1.73 × 10 −3 S cm −1 ) was found after incorporating 0.1 mol Al 3+ per formula unit into LTP. Moreover, since the crystal structural changes are almost linear in the LATP system up to x = 0.5, the increase of σ b is most probably related to additional Li + sites at the M 3 (36 f ) position. The additional Li + leads to a displacement of Li + occupying the M 1 (6 b ) sites towards the nearest-neighboring M 3 position, and therefore opens the fast-conducting pathway within the NASICON structure. A significant change in σ b was also observed as the Al 3+ content further increased ( x = 0.1 to 0.5). The highest σ b value of 5.63 × 10 −3 S cm −1 was obtained for samples with x = 0.4.
ISSN:2050-7488
2050-7496
DOI:10.1039/C5TA08545D