Enhancement of the thermoelectric properties of MnSb 2 Se 4 through Cu resonant doping

MnSb 2 Se 4 is a narrow band semiconductor having large Seebeck coefficients and intrinsically low thermal conductivities, but modest thermoelectric zT values due to having low carrier concentrations and high electrical resistivity. Here, we report that Cu substituted Mn 1−x Cu x Sb 2 Se 4 (0 ≤ x ≤...

Full description

Saved in:
Bibliographic Details
Published in:RSC advances 2015, Vol.5 (120), p.99065-99073
Main Authors: Li, Shanming, Zhao, Huaizhou, Zhang, Han, Ren, Guangkun, Liu, Ning, Li, Dandan, Yang, Chuansen, Jin, Shifeng, Shang, Dashan, Wang, Wenhong, Lin, Yuanhua, Gu, Lin, Chen, Xiaolong
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:MnSb 2 Se 4 is a narrow band semiconductor having large Seebeck coefficients and intrinsically low thermal conductivities, but modest thermoelectric zT values due to having low carrier concentrations and high electrical resistivity. Here, we report that Cu substituted Mn 1−x Cu x Sb 2 Se 4 (0 ≤ x ≤ 0.35) materials display resonant doping behavior, leading to significantly enhanced power factors (PFs) and overall thermoelectric zT values in the measured temperature range. For the optimized composition Mn 0.75 Cu 0.25 Sb 2 Se 4 , the PF reaches 0.26 mW m −1 K −2 at 773 K, coupled with low thermal conductivities of 0.61 W K −1 m −1 to 0.32 W K −1 m −1 over the measured temperature range. A peak zT of 0.64 at 773 K is achieved, which is a 100% increase in comparison to undoped MnSb 2 Se 4 . Such a high zT has rarely been seen in thermoelectric materials with a low symmetry of crystallization, implying that Cu-doped MnSb 2 Se 4 could be considered as a new platform in thermoelectric research for intermediate temperature power generation.
ISSN:2046-2069
2046-2069
DOI:10.1039/C5RA20688J