Benzo[b]thiophene-Fused Boron and Silicon Ladder Acenes

Synthetic routes to three new heteroacene compounds in which two benzo[b]thienyl units are bridged by dimethylsilyl and/or mesitylboryl units are described. In the Si/Si and Si/B compounds 1- syn and 3- syn , respectively, the sulfur atoms of the flanking benzo[b]thiophenes are disposed in meta posi...

Full description

Saved in:
Bibliographic Details
Published in:Organometallics 2013-11, Vol.32 (22), p.6820-6826
Main Authors: Mercier, Lauren G, Piers, Warren E, Harrington, Ross W, Clegg, William
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Synthetic routes to three new heteroacene compounds in which two benzo[b]thienyl units are bridged by dimethylsilyl and/or mesitylboryl units are described. In the Si/Si and Si/B compounds 1- syn and 3- syn , respectively, the sulfur atoms of the flanking benzo[b]thiophenes are disposed in meta positions on the central six-membered heterocycle, while in the B/B compound 4- anti , they are para to each other; the reasons for this lie in the synthetic method employed to prepare 4- anti . All three compounds were crystallographically characterized and their photophysical properties examined. A comprehensive examination of their photophysical properties shows that they are weakly absorbing and fluorescing materials, with the diborin derivative 4- anti exhibiting the most red-shifted absorption maxima and largest fluorescence quantum yield.
ISSN:0276-7333
1520-6041
DOI:10.1021/om4004187