Mobility Improvement and Temperature Dependence in MoSe 2 Field-Effect Transistors on Parylene-C Substrate

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Bibliographic Details
Published in:ACS nano 2014-05, Vol.8 (5), p.5079-5088
Main Authors: Chamlagain, Bhim, Li, Qing, Ghimire, Nirmal Jeevi, Chuang, Hsun-Jen, Perera, Meeghage Madusanka, Tu, Honggen, Xu, Yong, Pan, Minghu, Xaio, Di, Yan, Jiaqiang, Mandrus, David, Zhou, Zhixian
Format: Article
Language:English
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ISSN:1936-0851
1936-086X
DOI:10.1021/nn501150r