Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer

In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electr...

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Bibliographic Details
Published in:Journal of physical chemistry. C 2012-05, Vol.116 (18), p.10181-10185
Main Authors: Wang, Di-Yan, Wang, I-Sheng, Huang, I-Sheng, Yeh, Yun-Chieh, Li, Shao-Sian, Tu, Kun-Hua, Chen, Chia-Chun, Chen, Chun-Wei
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Molecular electronics, nanoelectronics
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Optoelectronic devices
Physics
Quantum dots
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp210062x