Modification of Alkaneselenolate Monolayers by Low-Energy Electrons

The effect of low-energy (50 eV) electron irradiation on alkaneselenolate (AS) self-assembled monolayers (SAMs) was studied by synchrotron-based X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure spectroscopy. As a test system, SAMs of dodecaneselenolate (C12Se) were used...

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Published in:Journal of physical chemistry. C 2008-01, Vol.112 (4), p.1191-1198
Main Authors: Weidner, T., Shaporenko, A., Ballav, N., Ulman, A., Zharnikov, M.
Format: Article
Language:English
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Summary:The effect of low-energy (50 eV) electron irradiation on alkaneselenolate (AS) self-assembled monolayers (SAMs) was studied by synchrotron-based X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure spectroscopy. As a test system, SAMs of dodecaneselenolate (C12Se) were used, and an analogous dodecanethiolate (C12S) SAM was taken as a reference. Both the alkyl matrix and headgroup−substrate interface in AS SAMs were found to be affected by a variety of closely interrelated irradiation-induced processes, which mostly follow a pseudo first-order kinetics and level off at high irradiation doses. The cross-sections of the most prominent processes were obtained and found to be in a range of 2−3 × 10-16 cm2. The values are very close to the parameters for analogous alkanethiolate (AT) SAMs, which exhibit similar behavior upon exposure to low-energy electron irradiation. At the same time, the saturation values of the fingerprint parameters for some irradiation-induced processes in AS SAMs appeared to be slightly smaller than the values for analogous AT films. This is explained by a stronger headgroup−substrate bond in the case of selenium.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp077234q