Morphology Control in the Vapor−Liquid−Solid Growth of SiC Nanowires

In this paper, we report a new technique to manipulate and control the morphology of vapor−liquid−solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the so...

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Bibliographic Details
Published in:Crystal growth & design 2008-11, Vol.8 (11), p.3893-3896
Main Authors: Wang, Huatao, Xie, Zhipeng, Yang, Weiyou, Fang, Jiyu, An, Linan
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth
physics of crystal growth
Methods of nanofabrication
Nanoscale materials and structures: fabrication and characterization
Other topics in nanoscale materials and structures
Physics
Quantum wires
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Summary:In this paper, we report a new technique to manipulate and control the morphology of vapor−liquid−solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg8002756