Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature

A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au­(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed la...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2019-10, Vol.11 (40), p.37229-37238
Main Authors: Van Daele, Michiel, Griffiths, Matthew B. E, Raza, Ali, Minjauw, Matthias M, Solano, Eduardo, Feng, Ji-Yu, Ramachandran, Ranjith K, Clemmen, Stéphane, Baets, Roel, Barry, Seán T, Detavernier, Christophe, Dendooven, Jolien
Format: Article
Language:English
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Summary:A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au­(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the precursor and reactant exposure. X-ray photoelectron spectroscopy measurements show that the gold films deposited at 120 °C are of higher purity than the previously reported ones (
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.9b10848