Transparent Flash Memory Using Single Ta 2 O 5 Layer for Both Charge-Trapping and Tunneling Dielectrics

We report reproducible multibit transparent flash memory in which a single solution-derived Ta O layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optim...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2017-07, Vol.9 (26), p.21856-21863
Main Authors: Hota, Mrinal K, Alshammari, Fwzah H, Salama, Khaled N, Alshareef, Husam N
Format: Article
Language:English
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Summary:We report reproducible multibit transparent flash memory in which a single solution-derived Ta O layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ∼10.7 V. Moreover, the flash memory device shows a stable 2-bit memory performance and good reliability, including data retention for more than 10 s and endurance performance for more than 100 cycles. The use of a common charge-trapping and tunneling layer can simplify the fabrication of advanced flash memories.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.7b03078