Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged as a cornerstone for a wide spectrum of semiconductor technology and electronic device applications, particularly in state-of-the-art complementary metal oxide semiconductor (CMOS) logic circuits and digital i...

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Published in:ACS applied electronic materials 2021-07, Vol.3 (7), p.2862-2897
Main Authors: Khosla, Robin, Sharma, Satinder K
Format: Article
Language:English
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Summary:Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged as a cornerstone for a wide spectrum of semiconductor technology and electronic device applications, particularly in state-of-the-art complementary metal oxide semiconductor (CMOS) logic circuits and digital information storage media. Recent unprecedented advancements and future perspectives on integrating ferroelectric materials, particularly with high-κ dielectrics for electronic devices, are weighed. The emphasis is on (i) application (logic and memory); (ii) ferroelectric materials (organic, inorganic, and two-dimensional (2D)); (iii) device structures (metal/ferroelectric/metal (MFM), metal/ferroelectric/semiconductor (MFS), metal/ferroelectric/insulator/semiconductor (MFIS), and metal/ferroelectric/metal/insulator/semiconductor (MFMIS)); and (iv) next-generation electronic devices (negative capacitance field effect transistors (NC-FETs), ferroelectric RAM (FeRAM), ferroelectric field effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs)). In NCFETs, the ferroelectric layer serves as a negative capacitor so that the channel surface potential can be amplified more than the gate voltage. Hence, devices can overcome the “Boltzmann tyranny” and operate with a steep subthreshold swing < 60 mV/dec and supply voltage < 0.5 V. Thus, NC-FETs would be more suitable for high-speed logic operations, scalability, low-power, and cost-effectiveness, targeting applications such as 14T-type CPU registers and 6T-type cache static random access memory (SRAM). Ferroelectrics also opens a path to solving the problems associated with technology scaling due to the unique structural and electronic properties. Ferroelectric memories are anticipated to be in different flavors based on optimum performance, cost, and end-user requirements. Herein, we deliberate on the exciting possibilities for the development of device structures such as one-transistor one-capacitor (1T-1C)-type FeRAM with fast access time (1014 cycles), and moderate data retention being considered as a strong contender for volatile dynamic random access memory (DRAM), while, for nonvolatile memory applications, 1T-type ferroelectric gated transistors, called FeFETs with nondestructive readout, fast access time (∼109 cycles), and high retention time (>10 years) have the potential to compete with embedded solid-state drives (SSDs). Finally, the FTJs
ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.0c00851