$Investigation of the solid state reactions by time-resolved X-ray diffraction while crystallizing kesterite Cu2ZnSnSe4 thin films$

Investigation of the solid state reactions by time-resolved X-ray diffraction while crystallizing kesterite Cu2ZnSnSe4 thin films

The pentanary chalcogenide Cu2ZnSn(S,Se)4 (CZTSSe) compound is attracting considerable attention as a low-cost and high-efficient solar cell. The band gap can be tuned by adding Se to pure kesterite Cu2ZnSnS4, which influences the crystallization kinetics. The investigation of the crystallization of...

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Bibliographic Details
Published in:	Thin solid films 2013-05, Vol.535, p.73-77
Main Authors:	Yoo, H., Wibowo, R.A., Hölzing, A., Lechner, R., Palm, J., Jost, S., Gowtham, M., Sorin, F., Louis, B., Hock, R.
Format:	Article
Language:	eng
Subjects:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Cu2ZnSnSe4 CZTSe Deposition by sputtering Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Energy Exact sciences and technology Formation reaction In-situ XRD Materials science Methods of deposition of films and coatings film growth and epitaxy Natural energy Photovoltaic conversion Physics Raman SnSe Solar cells. Photoelectrochemical cells Solar energy Sputtering Surface and interface electron states
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Summary:	The pentanary chalcogenide Cu2ZnSn(S,Se)4 (CZTSSe) compound is attracting considerable attention as a low-cost and high-efficient solar cell. The band gap can be tuned by adding Se to pure kesterite Cu2ZnSnS4, which influences the crystallization kinetics. The investigation of the crystallization of the pure selenium (Se) compound Cu2ZnSnSe4 can be helpful in understanding the reaction path between the elements of CZTSSe. Sputtered Cu-poor intermetallic Cu–Zn–Sn precursors were deposited on Mo-coated polyimide foil and sequentially capped by a thermally evaporated Se layer. Two different amounts of Se were deposited: amount that exactly matches the composition of Cu2ZnSnSe4; and that corresponding to twofold excess of the compound's element ratio. These two compositions were chosen to investigate influences of the amount of Se on the reaction path and kinetics. Also, the reaction of pure metallic Sn with Se was studied by stacking Sn layers on Mo-coated foils for observing a Sn-loss phenomenon. It was also deposited with two different amounts of Se matching approximately the compositions of SnSe and SnSe2. Time-resolved X-ray diffraction was employed to measure the solid state reactions while increasing the sample temperature up to 550°C at a rate of 0.5K/s in an evacuated reaction chamber. After the experiment, sample is analyzed by Raman spectroscopy to distinguish the CZTSe from secondary phases. ► SnSe2 is formed despite the small amount of Se in the Sn–Se precursor. ► The first reacting element with Se is Zn, not Cu which has an affinity with Se. ► Larger Se amount leads to a faster first selenization of ZnSe. ► At 415°C, massive crystallization of SnSe and ZnSe is triggered. ► CuxSnySez+ZnSe+SnSe→Cu2SnSe3+SnSe→Cu2ZnSnSe4
ISSN:	0040-6090 1879-2731