Spatial distribution of a hole localized on a magnetic acceptor in cubic crystals

The wave-function of a hole localized on a magnetic ion (Mn) in GaAs is considered. The calculations are based on the zero-range potential approximation. The obtained hole density spatial distribution is in good agreement with the experimental data of STM imaging. The influence of the exchange inter...

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Bibliographic Details
Published in:	Solid state communications 2006-12, Vol.140 (9), p.422-425
Main Authors:	Monakhov, A.M., Romanov, K.S., Panaiotti, I.E., Averkiev, N.S.
Format:	Article
Language:	eng
Subjects:	A. Nanostructures C. Scanning tunnelling microscopy D. Electronic states (localized) D. Quantum localization
Online Access:	Get full text
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Summary:	The wave-function of a hole localized on a magnetic ion (Mn) in GaAs is considered. The calculations are based on the zero-range potential approximation. The obtained hole density spatial distribution is in good agreement with the experimental data of STM imaging. The influence of the exchange interaction between a hole and 3d 5-electrons is analyzed. It is predicted that at room temperature this interaction does not change the hole density spatial distribution. The proposed method allows us to take into account additional factors such as deformation and chaotic electrical fields, external magnetic fields, quantum size confinement etc.
ISSN:	0038-1098 1879-2766