Challenges and improvement pathways to develop quasi-1D (Sb1-xBix)2Se3-based materials for optically tuneable photovoltaic applications. Towards chalcogenide narrow-bandgap devices

Quasi-1D chalcogenides have shown great promises in the development of emerging photovoltaic technologies. However, most quasi-1D semiconductors other than Sb2Se3 and Sb2S3 have been seldom investigated for energy generation applications. Indeed, cationic or anionic alloying strategies allow changin...

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Published in:Solar energy materials and solar cells 2023-03, Vol.251, p.112150, Article 112150
Main Authors: Caño, Ivan, Vidal-Fuentes, Pedro, Medaille, Axel Gon, Jehl, Zacharie, Jiménez-Arguijo, Alex, Guc, Maxim, Izquierdo-Roca, Victor, Malerba, Claudia, Valentini, Matteo, Jiménez-Guerra, Maykel, Placidi, Marcel, Puigdollers, Joaquim, Saucedo, Edgardo
Format: Article
Language:English
Subjects:
(Sb1-xBix)2Se3
Emerging earth-abundant materials
Narrow-bandgap devices
Photovoltaics
Quasi-1D materials
Sb2Se3
Synthesis
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Summary:Quasi-1D chalcogenides have shown great promises in the development of emerging photovoltaic technologies. However, most quasi-1D semiconductors other than Sb2Se3 and Sb2S3 have been seldom investigated for energy generation applications. Indeed, cationic or anionic alloying strategies allow changing the bandgap of these materials, opening the door to the development of an extended range of chalcogenides with tuneable optical and electrical properties. In this work, Bi incorporation into the Sb2Se3 structure has been proved as an effective approach to modulate the bandgap between  0.2. •Bandgap can be effectively tuned between 1.2 and 0.9 eV in (Sb1-xBix)2Se3 system.•Experimental evidence of increased defect concentration upon increasing Bi content.•Simulations: how interfacial and bulk recombination affect the shape of IQE curves.•Formation mechanism of (Bi,Sb)2Se3 has been investigated via interrupted growth.•Highest efficiency reported for the (Bi,Sb)2Se3 system: 1.4% for Bi amount >20%.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2022.112150