Growth and characterization of MnAu2 films
MnAu2 films ranging from 60 to 200nm thickness are deposited by co-sputtering from elemental targets. X-ray diffraction confirmed these films to be nearly single phase with tetragonal lattice parameters of a=0.336nm and c=0.872nm that compare well to the bulk values of a=0.336nm and c=0.876nm. The d...
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| Published in: | Journal of magnetism and magnetic materials 2017-01, Vol.421, p.336-339 |
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| Main Authors: | , |
| Format: | Article |
| Language: | eng |
| Subjects: | |
| Online Access: | Get full text |
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| Summary: | MnAu2 films ranging from 60 to 200nm thickness are deposited by co-sputtering from elemental targets. X-ray diffraction confirmed these films to be nearly single phase with tetragonal lattice parameters of a=0.336nm and c=0.872nm that compare well to the bulk values of a=0.336nm and c=0.876nm. The density of the films is analyzed using x-ray reflectivity to be 14.95g/cm3 and within experimental error of previously determined value of 15.00g/cm3. The films grown on c-plane sapphire, (100)MgO and (100)MgF2 are randomly oriented polycrystalline, while the films grown on a-plane sapphire, (111)MgO and (111)Si/(0001)AlN showed that the (110) plane is parallel to the film plane and there are three sets of domains in equal amount differing by 60° in-plane rotation. Magnetic order is found to become paramagnetic near 360K which is in close proximity to the bulk value. There are deviations in the slope of hysteresis loops observed at 10K around 10kOe that indicate complex magnetic switching.
•Single phase MnAu2 films were prepared with full density.•The lattice parameters are close to its bulk values.•The films on a-Al2O3, (111) MgO and (0001)AlN have the (110) in the film plane.•There are three sets of domains in equal amount differed by 60° in-plane rotation.•The magnetic ordering occurs near the bulk value of 363K. |
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| ISSN: | 0304-8853 |