A UHF-band 100 W broadband hybrid GaN power amplifier based on the regional modulation of impedance distribution method

A UHF-band 100 W broadband hybrid GaN power amplifier based on the regional modulation of impedance distribution method

•A UHF-band gallium nitride hybrid power amplifier with 100 W output power across 0.3–1.0 GHz is fabricated.•The regional modulation of impedance distribution method is presented for broadband design.•The impedance distribution curve within the broadband range shows “knotting” characteristics. In th...

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Bibliographic Details
Published in:International journal of electronics and communications 2021-11, Vol.141, p.153959, Article 153959
Main Authors: Lu, Yang, Xu, Xin, Han, Hongbo, Zhao, Bochao, Zhang, Hengshuang, Zhao, Ziyue, Yi, Chupeng, Wang, Yuchen, Guo, Lixin, Ma, Xiaohua
Format: Article
Language:eng
Subjects:
Broadband
GaN HEMT
Impedance distribution
Power amplifier
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Summary:•A UHF-band gallium nitride hybrid power amplifier with 100 W output power across 0.3–1.0 GHz is fabricated.•The regional modulation of impedance distribution method is presented for broadband design.•The impedance distribution curve within the broadband range shows “knotting” characteristics. In this paper, the regional modulation of impedance distribution (RMID) method for broadband power amplifier design is presented. We design and fabricate a wideband UHF-band gallium nitride (GaN) power amplifier (PA) consists of 2-chips containing self-developed GaN high electron mobility transistors (HEMTs) on a SiC substrate with gate lengths and widths of 0.25 μm and 10 mm, respectively. The pre-matching network designed by the RMID method converts the port impedances of the device to smaller real impedances, and exchanges the lower impedance ratio for wider frequency band characteristics. The distribution curve of the impedance points is tensioned or compressed according to the characteristics of the impedance transformation paths of different matching elements. As a result, the impedance distribution curve within the broadband range shows “knotting” characteristics. Then, the smaller impedances are matched to 50 Ω by low-Q microstrip impedance transforming lines. The measured output power, gain and efficiency values of the amplifier are higher than 100 W, 16 dB and 60%, respectively across 0.3–1.0 GHz, and the fractional bandwidth is up to 108%.
ISSN:1434-8411
1618-0399