Competing effects of current and strain on step structures on Si(001)2 × 1 studied by REM
Competing effects of current and strain on the step structures on Si(001)2 × 1 surfaces have been studied by reflection electron microscopy (REM). A REM specimen holder which can apply surface strain of about 0.1% to surfaces of Si specimens of 1 × 5.5 × 0.15 mm 3 in size and can heat them by DC cur...
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| Published in: | Surface science 1997-06, Vol.382 (1), p.310-319 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | eng |
| Subjects: | |
| Online Access: | Get full text |
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| Summary: | Competing effects of current and strain on the step structures on Si(001)2 × 1 surfaces have been studied by reflection electron microscopy (REM). A REM specimen holder which can apply surface strain of about 0.1% to surfaces of Si specimens of 1 × 5.5 × 0.15 mm
3 in size and can heat them by DC current fed through the specimens was newly constructed. A tensile strain along the 〈110〉 direction favors growth of terraces with dimers perpendicular to the strain direction irrespective of terrace width, while a compressive strain favors those with dimers parallel to the strain direction. Thus strain vs domain population (defined as relative occupancy of the two domain terraces) curves show asymmetry as have been reported by Webb et al. (Surf. Sci. 242 (1991) 23). On the other hand, a step-up current parallel to the 〈110〉 direction expands terraces with dimers parallel to the current if mean terrace width is wider than 0.1 μm. Thus, the competing two effects are expected on surfaces with wide terraces. It was found that the current apparently shifts the strain-domain population curves parallel to the strain axis depending on the direction of the current direction and the mean terrace width. |
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| ISSN: | 0039-6028 1879-2758 |