Transient state study of the polarization properties of sideband recombination emissions in GaN crystals

In this paper, we report that the polarizabilities of near sideband recombination emission I 1 and I 3 in GaN crystal change quadratically with density of bound excitons.

Bibliographic Details

Published in:	Journal of luminescence 1988-02, Vol.40, p.491-492
Main Authors:	Bao, Qingcheng, Zhang, Fengling, Pang, Shengmin, Li, Duolu, Tian, Nailiang, Xu, Xurong
Format:	Article
Language:	eng
Online Access:	Get full text
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