Loading…

Ce2Ni2Cd—A New Intermediate-Valent Cerium Compound

Ce2Ni2Cd was synthesized by reacting the elements in a sealed tantalum tube using a high-frequency furnace with a water-cooled sample chamber. The structure was refined from single-crystal X-ray data: ordered U3Si2 type, P4/mbm, a=755.67(8) pm, c=375.14(6) pm, wR2=0.0408, 232 F2 values, and 13 param...

Full description

Saved in:
Bibliographic Details
Published in:Journal of solid state chemistry 2000-02, Vol.150 (1), p.139-144
Main Authors: Niepmann, Dirk, Pöttgen, Rainer, Künnen, Bernd, Kotzyba, Gunter
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ce2Ni2Cd was synthesized by reacting the elements in a sealed tantalum tube using a high-frequency furnace with a water-cooled sample chamber. The structure was refined from single-crystal X-ray data: ordered U3Si2 type, P4/mbm, a=755.67(8) pm, c=375.14(6) pm, wR2=0.0408, 232 F2 values, and 13 parameters. A refinement of the occupancy parameters showed defects on the nickel site, resulting in a composition of Ce2Ni1.88(1)Cd for the crystal investigated. The structure may be described as an intergrowth of CsCl and AlB2 related slabs of compositions CeCd and CeNi2. Magnetic susceptibility measurements indicate intermediate-valent behavior of the cerium atoms. The susceptibility data can be fit to a modified Curie–Weiss expression with ΘP=−5.2(2) K, μexp=0.79(3) μB/Ce, and a temperature-independent contribution χ0=67.5(7)×10−9 m3/mol. Temperature-dependent resistivity measurements indicate metallic behavior with a specific resistivity of 140±20 μΩ cm at room temperature. Below 50 K the specific resistivity reveals a T2 dependence with ρ0=84.4(1) μΩ cm and A=0.0056(1) (μΩ cm)/K2.
ISSN:0022-4596
1095-726X
DOI:10.1006/jssc.1999.8567