Interfacial Chemistry‐Modified QD‐Coupled CdTe Solid Nanowire and Its Hybrid with Graphene Quantum Dots for Enhanced Photocurrent Properties

Here in, we report the formation of CdTe quantum dot interconnected solid nanowire network by a bottom up process. The as formed nanostructure, also, named as quantum dot solid structure has exhibited a high magnitude photocurrent value of 0.25 mA, corresponding to the biasing voltage of 1.5 V. The...

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Bibliographic Details
Published in:ChemistrySelect (Weinheim) 2017-11, Vol.2 (33), p.10771-10781
Main Authors: Premkumar, Sellan, Nataraj, Devaraj, Bharathi, Ganapathi, Khyzhun, Oleg Yu, Thangadurai, T. Daniel
Format: Article
Language:English
Subjects:
CdTe
Graphene
hybrid
Interfacial chemistry
Quantum dot
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Summary:Here in, we report the formation of CdTe quantum dot interconnected solid nanowire network by a bottom up process. The as formed nanostructure, also, named as quantum dot solid structure has exhibited a high magnitude photocurrent value of 0.25 mA, corresponding to the biasing voltage of 1.5 V. The improved photocurrent generation is a consequence of suppressed inter‐dot charge transport resistance upon quantum solid nanowire network formation. This interesting network structure was further decorated with graphene quantum dots by optimizing the growth parameters. The hybrid nanostructure has shown a further enhancement in the photocurrent generation. Formation of such new nanostructures and their interesting photo‐physical properties are discussed in detail. The CdTe quantum dots initially come closer through the formation of C−O‐C bonds between the MPA molecules capped adjacent quantum dots. With prolonging the reaction further, the closer quantum dots fuse to form a solid CdTe wire like structure. In the case of graphene hybrids, the C−O‐C bond formation takes place between the carboxyl group of graphene quantum dots and the CdTe nanowire. While formation of CdTe solid nanowire produced a high photocurrent value, its hybridization enhanced its photocurrent further.
ISSN:2365-6549
2365-6549
DOI:10.1002/slct.201702352