The Electronic Properties of Chlorine in GaN: An Ab Initio Study

Chlorine‐based reactive ion etching (RIE) is a fundamental processing step for the manufacturing of GaN semiconductor devices. As impurities can be unintentionally incorporated in the crystal during processing, the electronic properties of chlorine in GaN are investigated. Density functional theory...

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Bibliographic Details
Published in:physica status solidi (b) 2021-02, Vol.258 (2), p.n/a
Main Authors: Fujii, Yusuke, Micheletto, Ruggero, Alfieri, Giovanni
Format: Article
Language:English
Subjects:
chlorine
density functional theory
dry etching
point defects
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Summary:Chlorine‐based reactive ion etching (RIE) is a fundamental processing step for the manufacturing of GaN semiconductor devices. As impurities can be unintentionally incorporated in the crystal during processing, the electronic properties of chlorine in GaN are investigated. Density functional theory calculations of substitutional Cl and related complexes (with a vacancy or a dopant) are carried out. It is found that Cl and its complexes explain the reported effects of Cl RIE‐treated GaN on hole density and ohmic contact resistivity. Cl‐based reactive ion etching (RIE) is an important processing step of GaN device manufacuring. In the past, it was reported that Cl‐RIE results in the increase (decrease) in electron (hole) concentration in n‐(p‐)type GaN. Theoretical calculations show that such effects can be linked to the unintentional incorporation of Cl during processing.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.202000303