Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN

Ion implantation is a key step for device processing. This is required for anode/cathode or junction termination extension formation, which relies on the use of multiple‐energy implantation profiles (box profile). However, electrically active defects are known to arise after implantation, especially...

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Bibliographic Details
Published in:physica status solidi (b) 2020-04, Vol.257 (4), p.n/a
Main Authors: Alfieri, Giovanni, Sundaramoorthy, Vinoth Kumar
Format: Article
Language:English
Subjects:
annealing
ion implantation
minority carrier transient spectroscopy
point defects
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Summary:Ion implantation is a key step for device processing. This is required for anode/cathode or junction termination extension formation, which relies on the use of multiple‐energy implantation profiles (box profile). However, electrically active defects are known to arise after implantation, especially in the implant‐tail region. Although there are studies on majority carrier traps in implanted GaN, not much is known on minority carrier traps. For this reason, the electrical characterization of minority carrier levels is conducted in ion‐implanted n‐type GaN. Three electrically active levels are found in the 0.18–1.2 eV energy range, above the valence band edge, and their nature is discussed in the light of theoretical studies found in the literature. Ion implantation is a fundamental step for electronic device processing. However, electrically active defects that undermine the functionality of these devices can arise. Despite the effort put into studying majority carrier traps, several questions are still unanswered, such as what minority carrier traps arise after implantation and what their nature is.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201900506