Temperature and pressure dependence of the recombination mechanisms in 1.3 μm and 1.5 μm GaInNAs lasers

We have studied the pressure and temperature dependence of the threshold current density, J th, in 1.3 μm and 1.5 μm GaInNAs edge‐emitting lasers. We find that J th is more temperature sensitive for the 1.5 μm devices. From analysis of the spontaneous emission from these devices we find that J th fo...

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Bibliographic Details
Published in:Physica status solidi. B. Basic research 2007-01, Vol.244 (1), p.208-212
Main Authors: McConville, Daniel G., Sweeney, Stephen J., Adams, Alfred R., Tomic, Stanko, Riechert, Henning
Format: Article
Language:English
Subjects:
42.55.Px
62.50.+p
72.20.Jv
73.40.Kp
78.67.De
85.35.Be
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We have studied the pressure and temperature dependence of the threshold current density, J th, in 1.3 μm and 1.5 μm GaInNAs edge‐emitting lasers. We find that J th is more temperature sensitive for the 1.5 μm devices. From analysis of the spontaneous emission from these devices we find that J th for the 1.3 μm devices is comprised of 50% non‐radiative monomolecular recombination, 25% radiative recombination and 25% non‐radiative Auger recombination at room temperature. In the 1.5 μm devices however it is composed of 30% monomolecular recombination, 10% radiative recombination and 60% Auger recombination. It is clear that the major difference in J th between the devices is caused by the increased Auger recombination in the 1.5 μm devices. Previously, we found that J th for 1.3 µm GaInNAs lasers increases with pressure due to the increase in Auger recombination brought about by a large increase in the cubed threshold carrier density (n 3th). However, for the 1.5 µm devices, we find no significant change in J th with pressures up to 8 kbar. We suggest that this is due to the higher Auger coefficient for the 1.5 µm devices, which compensates for the increase in n 3th with pressure. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200672575