Evolution of the microdefect structure in silicon on isothermal annealing as determined by X-ray diffractometry

The dynamical theory of X‐ray diffraction by imperfect crystals with randomly distributed microdefects, applicable to double‐crystal diffractometry (DCD), has been extended to account for the simultaneous presence of several types of microdefects. The obtained formulae for coherent and diffuse compo...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2007-08, Vol.204 (8), p.2591-2597
Main Authors: Kyslovskyy, Ye. M., Vladimirova, T. P., Olikhovskii, S. I., Molodkin, V. B., Kochelab, E. V., Seredenko, R. F.
Format: Article
Language:English
Subjects:
61.10.Dp
61.10.Nz
61.72.Dd
61.72.Ff
61.72.Ji
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Experimental determination of defects by diffraction and scattering
Physics
Structure of solids and liquids
crystallography
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Summary:The dynamical theory of X‐ray diffraction by imperfect crystals with randomly distributed microdefects, applicable to double‐crystal diffractometry (DCD), has been extended to account for the simultaneous presence of several types of microdefects. The obtained formulae for coherent and diffuse components of the rocking curve (RC) have been applied to the quantitative characterization of the complex microdefect structure in silicon samples annealed at 750 °C for various time intervals by using high‐resolution double‐crystal X‐ray diffraction measurements. Time dependencies of concentrations and average sizes of oxygen precipitates and dislocation loops have been determined by using characterization results. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.200675680