Micro-Raman study of strain fields around dislocations in GaAs

The reliability of microelectronics devices strongly depends on defects like dislocations in the semiconductor wafers. Whereas several methods are routinely used to measure the dislocation density and residual stress in wafers, there is a need of methods to characterize the strain and stress fields...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2007-07, Vol.204 (7), p.2309-n/a
Main Authors: Irmer, G., Jurisch, M.
Format: Article
Language:English
Subjects:
61.72.Hh
63.20.Mt
78.30.Fs
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:The reliability of microelectronics devices strongly depends on defects like dislocations in the semiconductor wafers. Whereas several methods are routinely used to measure the dislocation density and residual stress in wafers, there is a need of methods to characterize the strain and stress fields around single dislocations with high lateral resolution. The strain and stress fields around single edge and screw dislocations in GaAs are considered, and the corresponding Raman shifts of the phonons are calculated. Due to the finite local resolution, mappings show averaged strain values. Requirements for lateral resolution and signal/noise ratios of the Raman measurements to characterize dislocations are discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.200623041