A K-band low-noise amplifier in 0.18-μm CMOS technology for SUB-1-V operation

A K‐band low‐noise amplifier (LNA) was realized in a standard 0.18‐μm CMOS technology. The cascaded common‐source configuration of four stages was adopted for low voltage operation and high gain performance. In addition, the gate‐source transformer feedback technique was employed to achieve a low no...

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Bibliographic Details
Published in:Microwave and optical technology letters 2009-09, Vol.51 (9), p.2202-2204
Main Authors: Jin, Jun-De, Hsu, Shawn S. H.
Format: Article
Language:English
Subjects:
CMOS
K-band
low-noise amplifier
transformer feedback
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Summary:A K‐band low‐noise amplifier (LNA) was realized in a standard 0.18‐μm CMOS technology. The cascaded common‐source configuration of four stages was adopted for low voltage operation and high gain performance. In addition, the gate‐source transformer feedback technique was employed to achieve a low noise figure (NF), which also enabled a single power supply operation and without using any resistive components. Under a supply voltage of only 0.8 V and a DC power consumption PDC of 12.6 mW, the measured gain and NF are 14.5 and 5.3 dB at 21 GHz, respectively. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2202–2204, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24530
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.24530