Lead‐free perovskite MASnBr 3 ‐based memristor for quaternary information storage

Abstract Memristors are a new type of circuit element with a resistance that is tunable to discrete levels by a voltage/current and sustainable after removal of power, allowing for low‐power computation and multilevel information storage. Many organic‐inorganic lead perovskites are reported to demon...

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Bibliographic Details
Published in:InfoMat 2020-07, Vol.2 (4), p.743-751
Main Authors: Qian, Wen‐Hu, Cheng, Xue‐Feng, Zhou, Jin, He, Jing‐Hui, Li, Hua, Xu, Qing‐Feng, Li, Na‐Jun, Chen, Dong‐Yun, Yao, Zhi‐Gang, Lu, Jian‐Mei
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Language:English
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Summary:Abstract Memristors are a new type of circuit element with a resistance that is tunable to discrete levels by a voltage/current and sustainable after removal of power, allowing for low‐power computation and multilevel information storage. Many organic‐inorganic lead perovskites are reported to demonstrate memristive behavior, but few have been considered for use as a multilevel memory; also, their potential application has been hindered by the toxicity of lead ions. In this article, lead‐free perovskite MASnBr 3 was utilized in memristors for quaternary information storage. Indium tin oxide (ITO)/MASnBr 3 /Au memristors were fabricated and showed reliable memristive switching with well‐separated ON/OFF states of a maxima resistance ratio of 10 2 to 10 3 . More importantly, four resistive states can be distinguished and repeatedly written/read/erased with a retention time of 10 4  seconds and an endurance of 10 4 pulses. By investigating the current‐electrode area relationship, Br distribution in the ON/OFF states by in situ Raman and scanning electron microscopy, and temperature‐dependent current decay, the memristive behavior was explicitly attributed to the forming/breaking of conductive filaments caused by the migration of Br − under an electric field. In addition, poly(ethylene terephthalate)‐ITO/MASnBr 3 /Au devices were found to retain their multiresistance state behavior after being bent for 1000 times, thus demonstrating good device flexibility. Our results will inspire more lead‐free perovskite work for multilevel information storage, as well as other memristor‐based electronics. image
ISSN:2567-3165
2567-3165
DOI:10.1002/inf2.12066