Room‐Temperature Non‐Local Spin Transport in Few‐Layer Black Phosphorus Passivated with MgO (Adv. Electron. Mater. 7/2022)

Black Phosphorus Passivated with MgO In article number 2101048, Chexin Li, Xiaoguang Xu, Yong Jiang, and co‐workers report that black phosphorus (BP) is passivated from H2O and O2 by a thin oxide layer (MgO) which serves as the barrier at the same time to improve the efficiency of spin injection. Th...

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Bibliographic Details
Published in:Advanced electronic materials 2022-07, Vol.8 (7), p.n/a
Main Authors: Li, Chexin, Xu, Xiaoguang, Ma, Yingli, Zhao, Bing, Zhang, Tanzhao, Wang, Le, Wu, Yong, Meng, Kangkang, Chen, Jikun, Jiang, Yong
Format: Article
Language:English
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Summary:Black Phosphorus Passivated with MgO In article number 2101048, Chexin Li, Xiaoguang Xu, Yong Jiang, and co‐workers report that black phosphorus (BP) is passivated from H2O and O2 by a thin oxide layer (MgO) which serves as the barrier at the same time to improve the efficiency of spin injection. The passivated BP‐based non‐local devices show good spin transport performance and are greatly simplified for real applications.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202270031